IGBT（Insulated Gate Bipolar Transistor），絕緣柵雙極型晶體管，是由BJT（雙極型三極管）和MOS（絕緣柵型場(chǎng)效應(yīng)管）組成的復(fù)合全控型電壓驅(qū)動(dòng)式功率半導(dǎo)體器件, 兼有MOSFET的高輸入阻抗和GTR的低導(dǎo)通壓降兩方面的優(yōu)點(diǎn)。GTR飽和壓降低，載流密度大，但驅(qū)動(dòng)電流較大;MOSFET驅(qū)動(dòng)功率很小，開(kāi)關(guān)速度快，但導(dǎo)通壓降大，載流密度小

產(chǎn)品型號(hào)：CM900HG-90H
廠商性質(zhì)：經(jīng)銷商
更新時(shí)間：2024-01-19
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詳細(xì)介紹

北京京誠(chéng)宏泰科技原裝正品現(xiàn)貨銷售4500V三菱IGBT模塊CM900HG-90H

IC..................................................................900 A
● VCES ...................................................... 4500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate

CM600HG-90H

CM400HA-28H 400A/1400V/1U
CM800HA-50H 800A/2500V/1U
CM600HA-28H 600A/1400V/1U
CM1200HA-50H 1200A/2500V/1U
CM1000HA-28H 1000A/1400V/1U
CM800HA-66H 800A/3300V/1U
CM400HA-34H 400A/1700V/1U
CM1200HA-66H 1200A/3300V/1U
CM800HD-66H 800A/3300V/1U
CM800HD-50H 800A/2500V/1U
CM1200HD-66H 1200A/3300V/1U
CM1200HD-50H 1200A/2500V/1U

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